View ST650C_390408.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Bulletin I25203 rev. B 04/00
ST650C..L SERIES
PHASE CONTROL THYRISTORS
www..com
Hockey Puk Version
Features
Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK)
790A
Typical Applications
DC motor control Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz VDRM/VRRM tq TJ typical
case style TO-200AC (B-PUK)
Units
A C A C A A KA2s KA2s V s C
ST650C..L
790 55 1557 25 10100 10700 510 475 2000 to 2400 200 - 40 to 125
www.irf.com
1
ST650C..L Series
Bulletin I25203 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
20 ST650C..L 22 24
VDRM /VRRM , max. repetitive peak and off-state voltage V
2000 2200 2400
VRSM , maximum nonrepetitive peak voltage V
2100 2300 2500
IDRM/I RRM max.
@ TJ = T J max
mA
80
www..com
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST650C..L
790 (324) 55 (85) 1857 10100 10700 8600 9150 A
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I 2t
Maximum I2 t for fusing
510 475 370 347
I2t
Maximum I2t for fusing
5100 1.04
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO)1 Low level value of threshold voltage V T(T O)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
V 1.13 (I > x IT(AV) ),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 0.35 2.07 600 1000 mA T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),T J = TJ max. I = 1700A, T J = TJ max, t = 10ms sine pulse
pk p
0.61
2
www.irf.com
ST650C..L Series
Bulletin I25203 rev. B 04/00
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current
ST650C..L
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, tr 1s TJ = T J max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s s Vd = 0.67% VDRM, TJ = 25C ITM = 750A, TJ = T J max, di/dt = 60A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s
p
www..com
td t
q
Typical delay time Typical turn-off time
200
Blocking
Parameter
dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST650C..L
500 80
Units Conditions
V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM IGM Maximum peak gate power
! ST650C..L
10.0 2.0 3.0 20 V 5.0 TYP. 200 MAX. 200 3.0 10 0.25 mA V TJ = TJ max V mA TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max, t 5ms
p
Units Conditions
TJ = TJ max, t 5ms W A
p
PG(AV) Maximum average gate power Max. peak positive gate current
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms
p
+VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage
IGT
DC gate current required to trigger 100 50 2.5
VGT
DC gate voltage required to trigger
1.8 1.1
IGD VGD
DC gate current not to trigger DC gate voltage not to trigger
www.irf.com
3
ST650C..L Series
Bulletin I25203 rev. B 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST650C..L
-40 to 125 -40 to 150 0.073 0.031 0.011 0.006 14700 (1500)
Units Conditions
C DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance,
www..com
junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
K/W N (Kg) g
wt
Approximate weight Case style
255
TO - 200AC (B-PUK)
See Outline Table
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Rectangular conduction Units Conditions
Single Side Double Side 0.006 0.011 0.015 0.021 0.036 0.006 0.011 0.015 0.021 0.036 K/W TJ = TJ max.
Sinusoidal conduction Conduction angle
Single Side Double Side 180 120 90 60 30 0.009 0.011 0.014 0.020 0.036 0.009 0.011 0.014 0.020 0.036
Ordering Information Table
Device Code
ST
1
65
2
0
3
C
4
24
5
L
6
1
7 8
1 2 3 4 5 6 7
-
Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) L = Puk Case TO-200AC (B-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
4
www.irf.com
ST650C..L Series
Bulletin I25203 rev. B 04/00
Outline Table
0.7 (0.03) MIN. 2 7 (1 . 06 ) M AX . 34 (1.34) DIA. MAX. TWO PLACES
www..com
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20 5 58 .5 (2.3 ) D I A. M AX . 4.7 (0.18)
! Case Style TO-200AC (B-PUK)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re ( C )
M a xim um A llo w a b le H e a t sin k T e m pe ra t u re (C )
1 30 1 20 1 10 1 00 90 80 70 60 0 50 1 00 1 50 20 0 2 5 0 3 0 0 35 0 4 00 A v e ra g e O n -s ta t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
C o nduc tion An g le
ST 6 5 0 C ..L Se rie s (Sin g le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K / W
13 0 12 0 11 0 10 0 90 30 80 70 60 0 10 0
ST 6 5 0 C ..L S e rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 7 3 K / W
Co nd uc tio n P erio d
30 60 9 0 120 180
60 90 120 180 200 300 4 00 DC 5 00 60 0
A v e ra g e O n - sta t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
www.irf.com
5
ST650C..L Series
Bulletin I25203 rev. B 04/00
M a x im u m A llo w a b le H e a tsin k Te m p e ra tu re ( C ) M a xim u m A llo w a b le H e a t sin k T e m p e ra t u re (C ) 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 10 0 2 00 3 0 0 4 0 0 5 00 6 00 7 0 0 80 0 A v e ra g e O n - sta t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
C o nduc tion A ng le
1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 2 00 4 00 30
ST 6 5 0 C ..L Se rie s (D o u ble S id e C o o le d ) R thJ-h s (D C ) = 0 .0 3 1 K / W
S T 6 5 0 C ..L S e rie s (D o u b le S id e C o o le d ) R th J-hs (D C ) = 0 .0 3 1 K / W
Co nd uc tio n Pe rio d
www..com
1 80 120 90 30 60
9 0 6 0 120 180 60 0 DC
80 0 10 0 0 1 2 00 1 40 0
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 4 - Current Ratings Characteristics
M a xim u m A v e ra g e O n -st a te P o w e r Lo ss (W )
17 5 0 15 0 0 12 5 0 10 0 0 750 500 250 0 0
1 80 1 20 90 60 30 R M S Lim it
M ax im u m A v e ra g e O n - st a t e P o w e r Lo ss (W )
20 0 0
2 40 0 2 20 0 2 00 0 1 80 0 1 60 0 DC 1 80 1 20 90 60 30
1 40 0 R M S Lim it 1 20 0 1 00 0 8 00 6 00 4 00 2 00 0 0 20 0 4 00 600 80 0 10 0 0 1 20 0 1 4 00 A v e ra g e O n -st a te C urre n t (A )
Fig. 6- On-state Power Loss Characteristics
C o ndu ct io n P erio d
C o nd uc tio n A ng le
S T 6 5 0 C ..L S e rie s T J = 1 2 5 C 1 0 0 2 00 3 0 0 4 0 0 50 0 6 0 0 70 0 8 00 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 5- On-state Power Loss Characteristics
S T 6 5 0 C ..L S e rie s T J = 1 2 5 C
A t A ny R at e d L o a d C o nd itio n A n d W ith R at e d V RR M A p plie d Fo llo w in g Su rge .
P e a k H a lf Sin e W a v e O n -st a t e C u rre n t (A )
P e a k H a lf Sin e W a v e O n -st a te C u rre n t (A )
10 0 00 9 00 0 8 00 0 7 00 0 6 00 0 5 00 0
1 2 00 0 1 1 00 0
In itia l T J = 1 2 5 C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s
M a x im u m N o n R e p e t it iv e S u rg e C u rre n t V e rsu s P u lse T ra in D u ra tio n . C o n t ro l O f C o n d u c t io n M a y N o t B e M a in t a in e d . In it ia l TJ = 1 2 5 C 1 0 00 0 N o V o lt a g e R e a p p lie d R a te d VR RM Re a p p lie d 90 0 0 80 0 0 70 0 0 60 0 0 50 0 0 S T6 5 0 C ..L S e rie s
ST 6 5 0 C ..L S e r ie s 4 00 0 1 10 10 0
Nu m be r O f Equ al Am p litud e H alf C yc le C urren t Pulse s (N )
40 0 0 0 .0 1
0. 1 P u lse T ra in D u ra t io n (s)
1
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
6
www.irf.com
ST650C..L Series
Bulletin I25203 rev. B 04/00
10000 Instan tan eous On -stat e Current (A)
T J = 25C
www..com
1000
T = 125C
J
ST650C..L Series 100 0. 5
1
1.5
2
2.5
3
Instan tan eous O n -stat e V oltage (V )
Fig. 9 - On-state Voltage Drop Characteristics
0. 1 St e a d y St a te V a lu e R thJ-hs = 0 .0 7 3 K/ W ( Sin gle Sid e C o o le d) R thJ-hs = 0 .0 3 1 K/ W ( D o u ble Sid e C o o le d ) 0 .0 1 ( D C O p e ra t io n )
T ra n sie n t T h e rm a l Im pe d a nc e Z thJ- hs (K / W )
ST 6 5 0 C ..L Se rie s
0 .0 0 1 0 .0 0 1
0 .0 1
0 .1 S q ua re W a v e P u lse D u ra t io n ( s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100 In st a nt an e o us G a te V o lta g e (V )
Re c t a n g u la r g a t e p ulse a ) R e c o m m e n d e d lo a d lin e f o r ra t e d d i/ dt : 2 0 V , 1 0 o h m s; t r<= 1 s b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< = 1 s (b )
Tj=-40 C
(1) (2) (3) (4) (a )
PG M PG M PG M PG M
= = = =
10W , 20W , 40W , 60W ,
tp tp tp tp
= = = =
4m s 2m s 1m s 0 .6 6 m s
Tj=25 C
Tj=125 C
1 VG D IG D 0 .1 0 .0 0 1 0 .0 1
(1)
(2)
(3) (4)
ST 6 5 0 C ..L Se rie s 0 .1 1
F re q u e n c y L im ite d b y P G ( A V ) 10 1 00
In st a n t an e o us G a t e C u rre n t ( A )
Fig. 11 - Gate Characteristics
www.irf.com
7

▲Up To Search▲

Price & Availability of ST650C

	To Download ST650C Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .